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| HFH13N80 Dec 2005 BVDSS = 800 V HFH13N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 68 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.77 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 0.77 ID = 12.6 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25 unless otherwise specified Parameter Value 800 Units V A A A V mJ A mJ V/ns W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) 12.6 8.0 50.4 30 (Note 2) (Note 1) (Note 1) (Note 3) 1100 12.6 30 4.0 300 2.38 -55 to +150 300 Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance Characteristics Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.24 -Max. 0.42 -40 /W Units SEMIHOW REV.A0,Dec 2005 HFH13N80 Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 6.3 A 2.5 --0.77 4.5 0.95 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.96 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---3300 270 23 4300 350 30 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 400 V, ID = 12.6 A, RG = 25 -------- 70 175 140 140 68 20 26 140 350 280 280 88 --- nC nC nC VDS = 640V, ID = 12.6 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 12.6 A, VGS = 0 V IS = 12.6 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------1100 16.4 12.6 50.4 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=13mH, IAS=12.6A, VDD=50V, RG=25, Starting TJ =25C 3. ISD12.6A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Dec 2005 HFH13N80 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 2.0 RDS(ON) [ ], Drain-Source On-Resistance 1.6 VGS = 10V 1.2 VGS = 20V 0.8 Note : TJ = 25 0 5 10 15 20 25 30 ID, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 5000 4500 4000 3500 VGS, Gate-Source Voltage [V] Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 160V 10 VDS = 400V VDS = 640V Capacitance [pF] 8 3000 2500 2000 1500 1000 500 0 -1 10 10 0 6 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 4 Crss 2 Note : ID = 12.6A 10 1 0 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0,Dec 2005 HFH13N80 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 14 10 2 Operation in This Area is Limited by R DS(on) 10 s 100 s 12 ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 10 8 6 4 2 0 25 10 0 10 -1 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 -2 10 10 1 10 2 10 3 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z JC Thermal Response (t), 10 -1 0.2 0.1 0.05 0.02 0.01 single pulse Notes : (t) W 1. Z JC = 0.42 / Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z JC (t) PDM t1 -3 10 -2 t2 10 0 10 -5 10 -4 10 10 -2 10 -1 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve SEMIHOW REV.A0,Dec 2005 HFH13N80 Fig 12. Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time SEMIHOW REV.A0,Dec 2005 HFH13N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop SEMIHOW REV.A0,Dec 2005 HFH13N80 Package Dimension TO-3P 15.60.20 13.60.20 9.60.20 4.80.20 .2 3 0 .20 1.50.20 13.90.20 14.90.20 19.90.20 18.70.20 1.40.20 30.20 20.20 10.20 3.50.20 16.50.20 5.45typ 5.45typ 0.60.20 SEMIHOW REV.A0,Dec 2005 |
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